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971.
Growth of thin Ti films on (100)W and the kinetics of their oxidation are studied using thermal-desorption spectroscopy and Auger electron spectroscopy. Titanium films grow nearly layer by layer on the (100)W face at room temperature. The activation energy for desorption of Ti atoms decreases from 5.2 eV for coverage θ=0.1 to 4.9 eV in a multilayer film. Oxidation of a thin (θ=6) titanium film starts with dissolution of oxygen atoms in its bulk to the limiting concentration for a given temperature, after which the film oxidizes to TiO, with the TiO2 oxide starting to grow when exposure of the film to oxygen is prolonged. The thermal desorption of oxides follows zero-order kinetics and is characterized by desorption activation energies of 5.1 (TiO) and 5.9 eV (TiO2).  相似文献   
972.
973.
Three types of transparency of a semiconductor superlattice, namely, self-induced, induced, and selective transparency, were studied. The conditions of their existence and the causes of their destruction were revealed. It was shown that the state of self-induced transparency, which is unstable in a harmonic field, can be stable in a biharmonic field.  相似文献   
974.
The history of the discovery of nanodiamond synthesis, the investigation of nanodiamond properties, and the application and organization of their production in the second half of the 20th century is expounded. It is noted that this history is unique, since nanodiamond synthesis was discovered in the USSR three times over 19 years: first by K.V. Volkov, V.V. Danilenko, and V.I. Elin at the VNIITF (Snezhinsk) in 1963 and then, in 1982, by A.M. Staver and A.I. Lyamkin at the Institute of Hydrodynamics, Siberian Division, Academy of Sciences of the USSR (Novosibirsk), and by G.I. Savvakin at the Institute of Problems of Materials Science, Academy of Sciences of the UkSSR (Kiev). All of these researchers discovered nanodiamond synthesis accidentally while studying diamond synthesis by shock compression of nondiamond carbon modifications in blast chambers. The priority of work by Russian scientists in this field is demonstrated.  相似文献   
975.
The states of electron-hole pairs in spherical silicon nanocrystals are theoretically studied using the “multiband” effective-mass approximation in the limit of an infinitely high potential barrier at the boundary. The degeneracy of the states at the top of the valence band is taken into account in the spherical approximation, and the ellipsoidal character of the electronic spectrum in the conduction band is allowed for. Coulomb interaction-induced corrections to the energy of an electron-hole pair are found.  相似文献   
976.
977.
For either of the two reflection spectra of cadmium difluoride that are known from experiments, a complete set of the fundamental optical functions is calculated in the energy range 4–45 eV with the Kramers-Kronig relationships. The basic features of the optical spectra are established, and a hypothesis for their origin is suggested based on the known theoretical results for the band structure.  相似文献   
978.
Amorphous silver, copper, gold, and iron films of a thickness between 6 and 350 nm are grown on polymeric substrates by vacuum evaporation. The nanostructure of the films is investigated. The dependence of the conductivity on the film thickness is obtained, and a correlation between the surface morphology and the conductivity is established.  相似文献   
979.
The integral characteristics of magnetization switching in amorphous gadolinium-cobalt films with perpendicular anisotropy are studied by visualizing the domain structure and measuring magnetooptic hysteresis loops. The films have a radial gradient of magnetic properties that is due to a spatially nonuniform thermal field. Magnetization switching in those film areas where the domain wall motion depends only on the coercive force is simulated in simple terms. In a first approximation, local events of magnetization switching are shown to take place independently of each other and the net hysteresis loop can be represented as a sum of the local loops.  相似文献   
980.
An analytical expression for the concentration profile of a low-soluble diffusant in a sample is derived for a high-capacity diffusion source. The model is checked by determining the diffusion coefficient of yttrium in beryllium.  相似文献   
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